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PDF ( 数据手册 , 数据表 ) NJG1146KG1

零件编号 NJG1146KG1
描述 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
制造商 New Japan Radio
LOGO New Japan Radio LOGO 


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NJG1146KG1 数据手册, 描述, 功能
NJG1146KG1
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
I GENERAL DESCRIPTION
The NJG1146KG1 is a fully matched wide band low noise
amplifier GaAs MMIC for terrestrial application.
To achieve wide dynamic range, the NJG1146KG1 offers
high gain mode and low gain mode. Selecting high gain mode
for weak signals, the NJG1146KG1 helps improve receiver
sensitivity through high gain and low noise figure.
Selecting low gain mode for strong signals, it bypasses LNA
circuit to offer higher linearity.
An small and ultra-thin package of ESON6-G1 is adopted.
I PACKAGE OUTLINE
NJG1146KG1
I APPLICATIONS
Terrestrial application from 40MHz to 900MHz
Digital TV, Set-top box and Broadband CATV applications
I FEATURES
G Operating frequency
G Operating voltage
G Package size
[High gain mode]
G Operating current
G Gain
G Noise figure
G IM2
G IM3
[Low gain mode]
G Low current consumption
G Gain(Low loss)
40MHz~900MHz
5.0V typ.
ESON6-G1 (Package size: 1.6mm x 1.6mm x 0.397mm typ.)
60mA typ.
12.0dB typ.
2.2dB typ.
52.0dB typ.
80.0dB typ.
30µA typ.
-1.0dB typ.
I PIN CONFIGURATION
(Top View)
4
RFIN
5
GND
Bias
circuit
6
VCTL
Logic
circuit
3
RFOUT2
2
NC
(GND)
1
RFOUT1
1pin INDEX
Pin Connection
1. RFOUT1
2. NC(GND)
3. RFOUT2
4. RFIN
5. GND
6. VCTL
*Exposed PAD: GND
I TRUTH TABLE “H”=VCTL(H)“L”=VCTL(L)
VCTL
LNA ON
Bypass
LNA mode
H ON
OFF
High Gain mode
L OFF
ON Low Gain mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-17
-1-







NJG1146KG1 pdf, 数据表
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (High Gain mode)
Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
S11, S22 (f=10MHz~3GHz)
S21, S12 (f=10MHz~3GHz)
VSWR (f=10MHz~3GHz)
Zin, Zout (f=10MHz~3GHz)
-8-







NJG1146KG1 equivalent, schematic
NJG1146KG1
I ELECTRICAL CHARACTERISTICS (Low Gain mode)
Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit
S11, S22 (f=50MHz~20GHz)
K-factor vs. Frequency
50
40
30
20
10
0
0
5000
10000
15000
Frequency (MHz)
20000
S21, S12 (f=50MHz~20GHz)
K-factor vs. Frequency
5
4
3
2
1
0
0
5000
10000
15000
20000
Frequency (MHz)
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