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PDF ( 数据手册 , 数据表 ) RWP15020-50

零件编号 RWP15020-50
描述 Wideband Power Amplifier
制造商 RFHIC
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RWP15020-50 数据手册, 描述, 功能
Wideband Power Amplifier
Product Features
• GaN on SiC Broadband High Power Amplifier
• 1000 ~ 2000MHz Operation Bandwidth
• Small Signal Gain 27dB min.
• 20W Typical. @ P3dB
RWP15020-50
Applications
• General Purpose
Package Type : DP-75
Description
The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other markets.
Operating frequency range is from 1000 ~ 2000MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ VCC = 28V; Tc = 45°C; ZS = ZL = 50Ω
PARAMETER
Operating Frequency
Small Signal Gain
Gain Variation vs Frequency
P 3 dB
OIP3 @ Po = +33dBm
(1MHz Tone spacing, CW 2-Tone)
Input Return Loss
UNIT
MHz
dB
dBpp
dBm
dBm
dB
MIN
1000
27
-
41
42
48
46
-
TYP
-
29
±1
43
44
50
48
-10
MAX
2000
31
±2
-
-
-
-
-6
2nd Harmonic suppression
dBc -
-35 -28
Supply Voltage
Quiescent Current consumption
Current Consumption @ P3 dB
V 27.5
A-
A-
28
2.2
-
30
2.5
3.6
On/Off Switching Time*
uS - 3 5
Shut Down or Switch On/Off
0 - 0.5
TTL Voltage**
V
2.5 5 5.5
Note.
*. Gate On/Off : High speed switching
**. Drain On/Off : 500ms delay
CONDITION
-
-
-
1000 ~ 1200MHz
1200 ~ 2000MHz
1000 ~ 1600 MHz
1600 ~ 2000 MHz
-
CW 1-tone
@Po = +30dBm, Freq 1000MHz
Vcc(=Vds)
-
CW 1-tone
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
1/7
All specifications may change without notice
Version 2.0












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