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零件编号 | RWP03060-10 | ||
描述 | Wideband Power Amplifier | ||
制造商 | RFHIC | ||
LOGO | |||
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Wideband Power Amplifier
RWP03060-10
Product Features
• GaN on SiC Broadband High Power Amplifier
• 20 ~ 512MHz Operation Bandwidth
• Power Gain 38dB @ Pin 11dBm
• 80W Typical @ Pin 11dBm
Applications
• General Purpose
Description
The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other markets.
Operating frequency range is from 20 ~ 512MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ VCC = 32V; Tc = 45°C; ZS = ZL = 50Ω
PARAMETER
Operating Frequency
UNIT
MHz
Power Gain @ Pin 11dBm
dB
Power Gain Flatness @ Pin 11dBm dBpp
Output Power @ Pin 11dBm
dBm
Input Return Loss
Supply Voltage
Quiescent Current Consumption
Current Consumption @ Pin 11dBm
dB
V
A
A
MIN
20
35
37
-
46
48
-
31.5
-
-
TYP
-
36
38
±1.0
47
49
-10
32
1.5
6.0
MAX
512
-
-
±2.0
-
-
-7
-
2.0
8.0
On/Off Switching Time*
uS -
5 10
Shut Down or Switch On/Off
0 - 0.5
TTL Voltage**
V
2.5 5 5.5
NOTE
*. Gate On/Off : High speed switching
**. Drain On/Off : 500ms delay
CONDITION
-
20 ~ 50MHz
50 ~ 512MHz
20 ~ 512MHz
20 ~ 50MHz
50 ~ 512MHz
-
Vcc(=Vds)
-
CW 1-tone
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
1/5
All specifications may change without notice
Version 1.4
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页数 | 5 页 | ||
下载 | [ RWP03060-10.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RWP03060-10 | Wideband Power Amplifier | RFHIC |
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