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零件编号 | CJ7203KDW | ||
描述 | N-channel MOSFET and Schottky Barrier Diode | ||
制造商 | JCET | ||
LOGO | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Power Management MOSFETs-Schottky
CJ7203KDW N-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
RDS(on)MAX
ID/IO
5Ω@10V
60V 340mA
5.3Ω@5V
40V / 350mA
SOT-363
FEATURE
APPLICATION
z High density cell design for Low RDS(on)
z Load Switch for Portable Devices
z High saturation current capability
z DC/DC Converter
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
z Low Capacitance
MARKING
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter
1-MOSFET
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM* Pulse Drain Current
Schottky Barrier Diode
VRRM
Peak Repetitive Reverse Voltage
VR DC Blocking Voltage
IO Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating:Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
60
±20
0.34
1.36
40
40
0.35
0.15
833
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
A-4,Mar,2016
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页数 | 6 页 | ||
下载 | [ CJ7203KDW.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
CJ7203KDW | N-channel MOSFET and Schottky Barrier Diode | JCET |
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