|
|
零件编号 | P3055LSG | ||
描述 | N-Channel Field Effect Transistor | ||
制造商 | NIKO-SEM | ||
LOGO | |||
1 Page
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P3055LSG
TO-263
Lead Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 50m
ID
12A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
EAS
EAR
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
0.6
LIMITS
±20
12
8
45
60
3
43
15
-55 to 150
275
UNITS
V
A
mJ
W
°C
MAXIMUM
2.6
60
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
25
0.8 1.2 2.5
V
±250 nA
1 AUG-13-2004
|
|||
页数 | 4 页 | ||
下载 | [ P3055LSG.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
P3055LS | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ETC |
P3055LSG | N-Channel Field Effect Transistor | NIKO-SEM |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |