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ASJD1200R085 Data Sheet PDF ( 数据手册 , 数据表 )

零件编号 ASJD1200R085
描述 Normally-ON Trench Silicon Carbide Power JFET
制造商 Micross
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ASJD1200R085 数据手册, 描述, 功能
ADVANCE INFORMATION SiC JFET
ASJD1200R085
Normally-ON Trench Silicon
Carbide Power JFET
FEATURES:
Die Inside
• Hermetic TO-258 Packaging
• 200°C Maximum Operating Temperature (260oC Contact Factory)
• Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
• Inherent Radiation Tolerance >100K TID
• Positive Temperature Coefcient for Ease of Paralleling
• Extremely Fast Switching with No “Tail” Current at 150°C
• 1200 Volt Drain-Source Blocking Voltage
• RDS(on)max of 0.085
• Voltage Controlled
4
• Low Gate Charge
• Low Intrinsic Capacitance
ProductSummary
BVDS
1200
RDS(ON)max 0.085
ETS,typ
TBD
V
:
μJ
D (2,4)
G (1)
APPLICATIONS:
• Satellite Solar Inverters
• Mil Spec Power Supplies
TO-258
- Switch Mode
- Uninterrupted
• Jet Engine Electronics
• Down-hole Electronics (Motor / Compressor Control)
123
S (3)
Internal Schematic
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
MAXIMUM RATINGS
Parameter
Symbol
Conditions
ContinuousDrainCurrent
ID,Tj=100
ID,Tj=150
Tj=100°C
Tj=150°C
PulsedDrainCurrent(1)
IDM Tc=25°C
ShortCircuitWithstandTime
tSC VDD<800V,TC<125°C
PowerDissipation
PD Tc=25°C
GateͲSourceVoltage
VGS AC(2)
OperatingandStorageTemperature
Tj,Tj,stg
LeadTemperatureforSoldering
Tsold 1/8"fromcase<10s
(1)Limitedbypulsewidth
(2)RgEXT=1ohm,tp<200ns,seeFigure5forstaticconditions
*Consultfactoryfor260OC
Value
52
43
75
50
114
15to+15
55to+200*
260
Unit
A
A
μS
W
V
oC
oC
THERMAL CHARACTERISTICS
Parameter
ThermalResistance,junctionͲtoͲcase
ThermalResistance,junctionͲtoͲambient
Symbol
Rth,JC
Rth,JA
Value
Typ Max
TBD
TBD
Unit
°C/W
For more products and
information, please visit our
website at www.micross.com
ASJD1200R085
Rev. 0.1 06/11
Micross Components reserves the right to change products or specications without notice.
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