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零件编号 | P1060ETF | ||
描述 | N-Channel Field Effect Transistor | ||
制造商 | NIKO-SEM | ||
LOGO | |||
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NIKO-SEM
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PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.75Ω
ID
10A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
100% UIS tested
LIMITS
600
±30
10
6
30
3.5
61
39
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 100V , L = 10mH, starting TJ = 25˚C
TYPICAL
MAXIMUM
3.2
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
MIN
LIMITS
TYP MAX
UNIT
600
2 2.9
4
V
±100 nA
F-49-1
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页数 | 4 页 | ||
下载 | [ P1060ETF.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
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P1060ETFS | N-Channel Field Effect Transistor | NIKO-SEM |
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