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零件编号 | G4812SS | ||
描述 | N-CHANNEL ENHANCEMENT MODE MOSFET | ||
制造商 | Diodes | ||
LOGO | |||
1 Page
DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V(BR)DSS
30V
RDS(on)
15mΩ @ VGS= 10V
18.5mΩ @ VGS= 4.5V
ID max
TA = +25°C
10.7A
9.6A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Features
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
Low RDS(ON) - minimizes conduction losses
Low VSD - reducing the losses due to body diode
conduction
Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
Low gate capacitance (Qg/Qgs) ratio – reduces risk of
shoot-through or cross conduction currents at high
frequencies
Avalanche rugged – IAR and EAR rated
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters
Power management functions
ESD PROTECTED
Top View
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
SD
D
SD
S DG
GD
Top View
Internal Schematic
S
Equivalent circuit
Ordering Information (Note 4)
Notes:
Part Number
DMG4812SSS-13
Case
SO-8
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
G4812SS
YY WW
14
Chengdu A/T Site
DMG4812SSS
Document number: DS35071 Rev. 3 - 2
85
G4812SS
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
G4812SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
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页数 | 6 页 | ||
下载 | [ G4812SS.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
G4812SS | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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