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PDF ( 数据手册 , 数据表 ) PA102FDG

零件编号 PA102FDG
描述 P-Channel Enhancement Mode MOSFET
制造商 UNIKC
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PA102FDG 数据手册, 描述, 功能
PA102FDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
115mΩ @VGS = -4.5V
ID
-10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-10
-6.2
-24
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
9.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5
110
UNITS
°C / W
Ver 1.1
1 2013-3-26












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