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零件编号 | P0260EIS | ||
描述 | N-Channel Enhancement Mode MOSFET | ||
制造商 | UNIKC | ||
LOGO | |||
1 Page
P0260EIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.4Ω @VGS = 10V
ID
2A
TO-251(IS)
1.GATE
2.DRAIN
3.SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
2
1.4
8
2
20
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
56
22
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.2
62.5
UNITS
°C / W
REV 1.1
1 2015/6/30
P0260EIS
N-Channel Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
REV 1.1
8 2015/6/30
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页数 | 8 页 | ||
下载 | [ P0260EIS.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
P0260EI | N-Channel Enhancement Mode MOSFET | UNIKC |
P0260EIS | N-Channel Enhancement Mode MOSFET | UNIKC |
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