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PDF ( 数据手册 , 数据表 ) P1006BIS

零件编号 P1006BIS
描述 N-Channel Enhancement Mode MOSFET
制造商 UNIKC
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P1006BIS 数据手册, 描述, 功能
P1006BIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID
66A
TO-251(IS)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
66
42
150
Avalanche Current
IAS 38.5
Avalanche Energy
L = 0.1mH
EAS
74
Power Dissipation
TC= 25 °C
TC= 100°C
PD
96
38
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
REV 1.0
1 2015/8/12







P1006BIS pdf, 数据表
P1006BIS
N-Channel Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
REV 1.0
8 2015/8/12














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