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PDF ( 数据手册 , 数据表 ) PK648BA

零件编号 PK648BA
描述 N-Channel Enhancement Mode MOSFET
制造商 UNIKC
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PK648BA 数据手册, 描述, 功能
PK648BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.4mΩ @VGS = 10V
ID
75A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
47
150
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
19.8
15.8
Avalanche Current
IAS 37
Avalanche Energy
L =0.1mH
EAS
71
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
35
14
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
Junction-to-Case
RqJC
3.6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 26A.
UNITS
°C / W
REV 1.0
1 2016/11/4







PK648BA pdf, 数据表
PK648BA
N-Channel Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
REV 1.0
8 2016/11/4














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