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PDF ( 数据手册 , 数据表 ) PK616BA

零件编号 PK616BA
描述 N-Channel Enhancement Mode MOSFET
制造商 UNIKC
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PK616BA 数据手册, 描述, 功能
PK616BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ @VGS = 10V
ID
50A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
50
31.5
120
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
13
10.5
Avalanche Current
IAS 24
Avalanche Energy
L =0.1mH
EAS
28.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.2
1.4
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
57
Junction-to-Case
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014-2-20












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