DataSheet8.cn


PDF ( 数据手册 , 数据表 ) PK5E6BA

零件编号 PK5E6BA
描述 N-Channel Enhancement Mode MOSFET
制造商 UNIKC
LOGO UNIKC LOGO 


1 Page

No Preview Available !

PK5E6BA 数据手册, 描述, 功能
PK5E6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
52A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±25 V
Continuous Drain Current4
Pulsed Drain Current1
Continuous Drain Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
ID
52
33
120
A
19
15
Avalanche Current
IAS 33
Avalanche Energy
L =0.1mH
EAS
54 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
W
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4
W
2.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
30
51
Junction-to-Case
Steady-State
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is 35A.
UNITS
°C / W
REV 1.0
1 2017/1/10







PK5E6BA pdf, 数据表
PK5E6BA
N-Channel Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
REV 1.0
8 2017/1/10














页数 8 页
下载[ PK5E6BA.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
PK5E6BAN-Channel Enhancement Mode MOSFETUNIKC
UNIKC

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap