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零件编号 | P6006HV | ||
描述 | Dual N-Channel Enhancement Mode MOSFET | ||
制造商 | UNIKC | ||
LOGO | |||
1 Page
P6006HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 60mΩ @VGS = 10V
ID
4.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
4.5
3.2
20
Avalanche Current
IAS 18
Avalanche Energy
L =0.1mH
EAS
16
Power Dissipation
TA = 25 °C
TA= 70°C
PD
2
1.28
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJL
RqJA
TYPICAL
MAXIMUM
60
62.5
UNITS
°C / W
REV 1.0
1 2014-2-27
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页数 | 5 页 | ||
下载 | [ P6006HV.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
P6006HV | Dual N-Channel Enhancement Mode MOSFET | UNIKC |
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