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PDF ( 数据手册 , 数据表 ) PZ1203EV

零件编号 PZ1203EV
描述 P-Channel Enhancement Mode MOSFET
制造商 UNIKC
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PZ1203EV 数据手册, 描述, 功能
PZ1203EV
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-12A
SOP- 8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-12
-9
-50
Avalanche Current
IAS -43
Avalanche Energy
L = 0.1mH
EAS
94
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJc
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.0
1 2014/9/17












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