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零件编号 | PZ5203EMA | ||
描述 | P-Channel Enhancement Mode MOSFET | ||
制造商 | UNIKC | ||
LOGO | |||
1 Page
PZ5203EMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID
-3A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±16
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3
2.5
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.8
0.5
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
162
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper,in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
UNITS
°C / W
REV 1.0
1 2015/7/30
PZ5203EMA
P-Channel Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
REV 1.0
8 2015/7/30
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页数 | 8 页 | ||
下载 | [ PZ5203EMA.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
PZ5203EMA | P-Channel Enhancement Mode MOSFET | UNIKC |
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