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PDF ( 数据手册 , 数据表 ) P5103EMG

零件编号 P5103EMG
描述 P-Channel Enhancement Mode MOSFET
制造商 UNIKC
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P5103EMG 数据手册, 描述, 功能
P5103EMG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID
-3.8A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.8
-3
-20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1
0.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Steady State
RqJA
117
Junction-to-Lead
Steady State
RqJC
60
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
Rev 1.1
1 2015/7/8







P5103EMG pdf, 数据表
P5103EMG
P-Channel Logic Level Enhancement Mode MOSFET
D.Label rule
标签内容(Label content)
Rev 1.1
8 2015/7/8














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