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零件编号 | PK615BM6 | ||
描述 | N-Channel Enhancement Mode MOSFET | ||
制造商 | UNIKC | ||
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1 Page
PK615BM6
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
2.6Ω @VGS = 10V
ID
0.37A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
0.37
0.29
2.2
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.83
0.53
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1 limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
150 °C / W
Ver 1.0
1 2012/6/26
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页数 | 5 页 | ||
下载 | [ PK615BM6.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
PK615BM6 | N-Channel Enhancement Mode MOSFET | UNIKC |
PK615BMA | N-Channel Enhancement Mode MOSFET | UNIKC |
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