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零件编号 | EMY1 | ||
描述 | Dual Transistors | ||
制造商 | JCET | ||
LOGO | |||
1 Page
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-553 Plastic-Encapsulate Transistors
EMY1 Dual Transistors (PNP+NPN)
FEATURES
z Includes a 2SA1037AK and a 2SC2412K transistor in a package
z PNP and NPN transistors have common emitters
z Mounting cost and area can be cut in half
Marking: Y1
SOT-553
Tr1 Absolute maximum ratings (Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Test conditions
V(BR)CBO IC=-50μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-50μA, IC=0
ICBO
VCB=-60V, IE=0
IEBO VEB=-6V, IC=0
hFE VCE=-6V, IC=-1mA
VCE(sat) IC=-50mA, IB=-5mA
fT VCE=-12V, IC=-2mA, f=100MHz
Cob VCB=-12V, IE=0, f=1MHz
Value
-60
-50
-6
-150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
Min Typ Max Unit
-60 V
-50 V
-6 V
-0.1 μA
-0.1 μA
120 560
-0.50
V
140 MHz
5 pF
wwwww.cwj-.cejl-eecle.cco.cmom
1
C,Sep,2016
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页数 | 4 页 | ||
下载 | [ EMY1.PDF 数据手册 ] |
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