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零件编号 | R6076MNZ1 | ||
描述 | MOSFET ( Transistor ) | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
R6076MNZ1
Nch 600V 76A Power MOSFET
Datasheet
VDSS
600V
lOutline
RDS(on)(Max.)
0.055Ω
ID
±76A
TO-247
PD
740W
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
450
Taping code
C9
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6076MNZ1
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±76 A
Pulsed drain current
IDP*2
±228
A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*4 16 A
Avalanche energy, single pulse
EAS*4
68.7 mJ
Power dissipation (Tc = 25°C)
PD 740 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20151117 - Rev.002
R6076MNZ1
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(l)
Datasheet
Fig.14 Typical Capacitance vs.
Drain - Source Voltage
Fig.15 Switching Characteristics
Fig.16 Dynamic Input Characteristics
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
8/11
20151117 - Rev.002
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页数 | 14 页 | ||
下载 | [ R6076MNZ1.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
R6076MNZ1 | MOSFET ( Transistor ) | ROHM Semiconductor |
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