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PDF ( 数据手册 , 数据表 ) R6076MNZ1

零件编号 R6076MNZ1
描述 MOSFET ( Transistor )
制造商 ROHM Semiconductor
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R6076MNZ1 数据手册, 描述, 功能
R6076MNZ1
  Nch 600V 76A Power MOSFET
   Datasheet
VDSS
600V
lOutline
 
RDS(on)(Max.)
0.055Ω
ID
±76A
TO-247
PD
740W
 
      
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
450
Taping code
C9
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6076MNZ1
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±76 A
Pulsed drain current
IDP*2
±228
A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*4 16 A
Avalanche energy, single pulse
EAS*4
68.7 mJ
Power dissipation (Tc = 25°C)
PD 740 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20151117 - Rev.002    







R6076MNZ1 pdf, 数据表
R6076MNZ1
      
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
     Resistance vs. Drain Current(l)
        
Datasheet
Fig.14 Typical Capacitance vs.
     Drain - Source Voltage
Fig.15 Switching Characteristics
Fig.16 Dynamic Input Characteristics
                                                                                          
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
8/11
20151117 - Rev.002














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