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零件编号 | R6010MND3 | ||
描述 | MOSFET ( Transistor ) | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
R6010MND3
Nch 600V 10A Power MOSFET
Datasheet
VDSS
600V
lOutline
RDS(on)(Max.)
0.380Ω
ID
±10A
TO-252
PD
143W
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6010M
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±10 A
Pulsed drain current
IDP*2 ±30 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS 1.5 A
Avalanche energy, single pulse
EAS*3
0.6 mJ
Power dissipation (Tc = 25°C)
PD 143 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160725 - Rev.003
R6010MND3
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(l)
Datasheet
Fig.14 Typical Capacitance vs.
Drain - Source Voltage
Fig.15 Switching Characteristics
Fig.16 Dynamic Input Characteristics
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
8/11
20160725 - Rev.003
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页数 | 14 页 | ||
下载 | [ R6010MND3.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
R6010MND3 | MOSFET ( Transistor ) | ROHM Semiconductor |
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