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零件编号 | QH8MA4 | ||
描述 | MOSFET ( Transistor ) | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
QH8MA4
30V Nch+Pch Middle Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Pch
30V -30V
16.0mΩ 28.6mΩ
±9.0A ±8.0A
2.6W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TSMT8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
Marking
MA4
lAbsolute maximum ratings (Ta = 25°C) ,unless otherwise specified.
Parameter
Symbol
Value
Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage
VDSS
30 -30
V
Continuous drain current
ID*1
±9.0 ±8.0
A
Pulsed drain current
ID,
*2
pulse
±18 ±18
A
Gate - Source voltage
VGSS
±20 ±20
V
Avalanche energy, single pulse
EAS*4
3.5 2.2
mJ
Avalanche current
IAS*4
7.0 -5.5
A
Power dissipation
total PD*1 2.6
PD*3 1.5 W
element
PD*3
1.25
Junction temperature
Tj 150 ℃
Range of storage temperature
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/19
20150730 - Rev.004
QH8MA4
lElectrical characteristic curves <Tr1>
Fig.11 Drain Current Derating Curve
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
8/19
20150730 - Rev.004
QH8MA4
lElectrical characteristic curves <Tr2>
Fig.17 Typical Capacitance vs. Drain -
Source Voltage
Datasheet
Fig.18 Switching Characteristics
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
Voltage
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
16/19
20150730 - Rev.004
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页数 | 20 页 | ||
下载 | [ QH8MA4.PDF 数据手册 ] |
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