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零件编号 | QH8JA1 | ||
描述 | MOSFET ( Transistor ) | ||
制造商 | ROHM Semiconductor | ||
LOGO | |||
1 Page
QH8JA1
-20V Pch +Pch Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-20V
38mΩ
±5.0A
1.5W
lFeatures
1) Low on - resistance.
2) Small surface mount package(TSMT8)
3) -1.8V Drive.
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lApplication
Switching
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCR
JA1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±5.0 A
Pulsed drain current
IDP*2 ±18 A
Gate - Source voltage
VGSS
±10 V
Avalanche current, single pulse
IAS*3 -5.0 A
Avalanche energy, single pulse
EAS*3
8.9 mJ
Power dissipation (total)
PD*4 1.5
W
PD*5 1.1
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20151210 - Rev.001
QH8JA1
lElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current (I)
Datasheet
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current (lII)
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current (IV)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
8/11
20151210 - Rev.001
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页数 | 14 页 | ||
下载 | [ QH8JA1.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
QH8JA1 | MOSFET ( Transistor ) | ROHM Semiconductor |
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