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零件编号 | XP131A0616SR | ||
描述 | Power MOS FET | ||
制造商 | Torex Semiconductor | ||
LOGO | |||
1 Page
N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance: 0.016Ω MAX
Ultra High-Speed Switching
SOP-8 Package
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
General Description
The XP131A0616SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Features
Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V)
Rds(on)=0.022Ω(Vgs=2.5V)
Rds(on)=0.045Ω(Vgs=1.5V)
Ultra high-speed switching
Operational Voltage: 1.5V
High density mounting: SOP-8
Pin Configuration
S1
S2
S3
G4
SOP-8
(TOP VIEW)
8D
7D
6D
5D
Equivalent Circuit
18
27
36
45
N-Channel MOS FET
(1 device built-in)
Pin Assignment
PIN
NUMBER
PIN
NAME
1~3 S
4G
5~8 D
FUNCTION
Source
Gate
Drain
u
Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
20 V
±8 V
10 A
30 A
10 A
Continuous Channel
Power Dissipation (note)
Pd
2.5 W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a glass epoxy PCB
150
-55~150
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页数 | 4 页 | ||
下载 | [ XP131A0616SR.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
XP131A0616SR | Power MOS FET | Torex Semiconductor |
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