DataSheet8.cn


PDF ( 数据手册 , 数据表 ) K80E07NE

零件编号 K80E07NE
描述 TK80E07NE
制造商 Toshiba
LOGO Toshiba LOGO 


1 Page

No Preview Available !

K80E07NE 数据手册, 描述, 功能
TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (UMOS -H)
TK80E07NE
„ E-Bike/UPS/Inverter
Unit: mm
Note : This product is designed for E-Bike / UPS / Inverter in China / India market.
z Low drainsource on-resistance
: RDS(ON) = 6.9 m(typ.)
z Low leakage current
: IDSS = 10 µA (max) (VDS = 70 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
DC (Note 1,4)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Peak diode recovery dv/dt (Note 5)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Thermal Characteristics
Symbol
VDSS
VDGR
VGSS
ID
ID
IDP
PD
EAS
IAR
EAR
dv/dt
Tch
Tstg
Rating
70
70
±20
80
58
240
87
16.4
40
8.7
11.5
175
55~175
Unit
V
V
V
A
A
A
W
mJ
A
mJ
V/ns
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
-
WWeeiigghhtt:: 11..993gg((ttyypp.))
Unit: mm
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth(chc)
Rth(cha)
1.72
83.3
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L =14.9µH, RG = 25 , IAR = 40A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: Tc = 100°C
Note 5: IDR 80 A,di/dt 160 A/µs, Tch Tch max.,
VDS peak VDSS
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
-
Weight: 1.9 g (typ.)
Note :Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).Thermal Characteristics
1 2013-03-07












页数 6 页
下载[ K80E07NE.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
K80E07NETK80E07NEToshiba
Toshiba

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap