DataSheet8.cn


PDF ( 数据手册 , 数据表 ) EN29LV800C

零件编号 EN29LV800C
描述 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
制造商 Eon Silicon Solution
LOGO Eon Silicon Solution LOGO 


1 Page

No Preview Available !

EN29LV800C 数据手册, 描述, 功能
EN29LV800C
Purpose
Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on
ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the
compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
same as that of Eon delivered before. Please be advised with the change and appreciate your
kindly cooperation and fully support Eon’s product family.
Eon products’ New Top Marking
cFeon Top Marking Example:
cFeon
Part Number: XXXX-XXX
Lot Number: XXXXX
Date Code: XXXXX
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as an Eon product. Any
changes that have been made are the result of normal data sheet improvement and are noted in
the document revision summary, where supported. Future routine revisions will occur when
appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Eon continues to support existing part numbers beginning with “Eon” and “cFeon” top marking. To
order these products, during the transition please specify “Eon top marking” or “cFeon top marking”
on your purchasing orders.
For More Information
Please contact your local sales office for additional information about Eon memory solutions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
© 2004 Eon Silicon Solution, Inc.,
Rev. H, Issue Date: 2011/10/26
www.eonssi.com







EN29LV800C pdf, 数据表
TABLE 3. OPERATING MODES
EN29LV800C
8M FLASH USER MODE TABLE
Operation
CE#
Read
Write
CMOS Standby
Output Disable
Hardware Reset
Temporary Sector
Unprotect
L
L
Vcc ± 0.3V
L
X
X
OE#
L
H
X
H
X
X
WE#
H
L
X
H
X
X
Reset#
A0-
A18
H
H
Vcc ± 0.3V
H
L
VID
AIN
AIN
X
X
X
AIN
DQ0-DQ7
DOUT
DIN
High-Z
High-Z
High-Z
DIN
DQ8-DQ15
Byte# Byte#
= VIH
DOUT
DIN
High-Z
= VIL
High-Z
High-Z
High-Z
High-Z High-Z
High-Z High-Z
DIN X
Notes:
L=logic low= VIL, H=Logic High= VIH, VID =11 ± 0.5V, X=Don’t Care (either L or H, but not floating!),
DIN=Data In, DOUT=Data Out, AIN=Address In
TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes)
8M FLASH MANUFACTURER/DEVICE ID TABLE
CE OE W A18 A11 A92 A8 A7 A6 A5 A1 A0 DQ8
Description Mode # # E# to to
to to
A12 A10
A2 DQ15
DQ7 to
DQ0
Manufacturer ID:
Eon
L LH X
H1
X VID
XLXLL
L
X
1Ch
7Fh
Device ID
(top boot
block)
Device ID
(bottom boot
block)
Word
Byte
Word
Byte
Sector Protection
Verification
L
L
L
L
L
LH
LH
LH
LH
X
X
L H SA
22h
X VID X X L X L H
X
DAh
DAh
22h
X VID X X L X L H
X
5Bh
5Bh
X VID X X L X H L
X
01h
(Protected)
X
00h
(Unprotected)
L=logic low= VIL, H=Logic High= VIH, VID =11 ± 0.5V, X=Don’t Care (either L or H, but not floating!), SA=Sector
Addresses
Note:
1. A8=H is recommended for Manufacturing ID check. If a manufacturing ID is read with A8=L, the chip will output a
configuration code 7Fh.
2. A9 = VID is for HV A9 Autoselect mode only. A9 must be Vcc (CMOS logic level) for Command Autoselect
Mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
© 2004 Eon Silicon Solution, Inc.,
Rev. H, Issue Date: 2011/10/26
www.eonssi.com







EN29LV800C equivalent, schematic
EN29LV800C
selected sectors are protected, DQ6 will toggle for about 100 μs. The chip will then return to the read
mode without changing data in all protected sectors.
The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is shown
in Figure 9.
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or
erase cycle was not successfully completed. Since it is possible that DQ5 can become a 1 when the
device has successfully completed its operation and has returned to read mode, the user must check
again to see if the DQ6 is toggling after detecting a “1” on DQ5.
The DQ5 failure condition may appear if the system tries to program a “1” to a location that is previously
programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition,
the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a
“1.” Under both these conditions, the system must issue the reset command to return the device to
reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the output on DQ3 can be used to determine whether
or not an erase operation has begun. (The sector erase timer does not apply to the chip erase
command.) When sector erase starts, DQ3 switches from “0” to “1.” This device does not support
multiple sector erase command sequences so it is not very meaningful since it immediately shows as a
“1” after the first 30h command. Future devices may support this feature.
DQ2: Erase Toggle Bit II
The “Toggle Bit” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2
toggles when the system reads at addresses within those sectors that have been selected for erasure.
(The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether
the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected
for erasure. Thus, both status bits are required for sector and mode information. Refer to the following
table to compare outputs for DQ2 and DQ6.
Flowchart 6 shows the toggle bit algorithm, and the section “DQ2: Toggle Bit” explains the algorithm.
See also the “DQ6: Toggle Bit I” subsection. Refer to the Toggle Bit Timings figure for the toggle bit
timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical
form.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
16
© 2004 Eon Silicon Solution, Inc.,
Rev. H, Issue Date: 2011/10/26
www.eonssi.com










页数 30 页
下载[ EN29LV800C.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
EN29LV8008 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash MemoryEon Silicon Solution
Eon Silicon Solution
EN29LV800A8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash MemoryEon Silicon Solution
Eon Silicon Solution
EN29LV800B8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash MemoryEon Silicon Solution
Eon Silicon Solution
EN29LV800C8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash MemoryEon Silicon Solution
Eon Silicon Solution

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap