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PDF ( 数据手册 , 数据表 ) IGB30N60T

零件编号 IGB30N60T
描述 IGBT
制造商 Infineon
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IGB30N60T 数据手册, 描述, 功能
IGB30N60T
TRENCHSTOPSeries
q
Low Loss IGBT : IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
TRENCHSTOPtechnology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO263-3
Type
IGB30N60T
VCE
600V
IC
30A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking Code
G30T60
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
45
39
90
90
20
5
187
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 19.05.2015







IGB30N60T pdf, 数据表
IGB30N60T
TRENCHSTOPSeries
q
15V
10V
120V
480V
1nF
C
iss
5V
100pF
C oss
0V0nC 30nC 60nC 90nC 120nC 150nC 180nC
C rss
0V 10V 20V 30V 40V
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
400A
300A
200A
100A
0 A1 2 V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 400V, Tj 150C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
IFAG IPC TD VLS
8
Rev. 2.5 19.05.2015














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