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PDF ( 数据手册 , 数据表 ) CE3520K3

零件编号 CE3520K3
描述 20 GHz Super Low Noise FET
制造商 CEL
LOGO CEL LOGO 


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CE3520K3 数据手册, 描述, 功能
RF Low Noise FET
CE3520K3
20 GHz SupEenrteLroawShNorot iDsoecuFmEeTnti/nTitHleoNllaomwe HPelarestic PKG
DESCRIPTION
Super Low Noise and High Gain
Hollow (Air cavity) Plastic package
FEATURES
Super Low noise figure and high associated gain:
NF = 0.55 dB TYP., Ga = 13.8 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 20 GHz
PACKAGE
Micro-X plastic package
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
Order Number
CE3520K3
CE3520K3-C1
Package
Micro-X plastic
package
Marking
C6
Description
Embossed tape 8 mm wide
Pin 4 (Gate) faces the
perforation side of the tape
MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: July 2016
CDS-0019-04 (Issue A)
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CE3520K3 pdf, 数据表
CE3520K3
[CAUTION]
This product uses gallium arsenide (GaAs) of the toxic substance appointed in laws and ordinances.
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
Do not dispose in fire or break up this product.
Do not chemically make gas or powder with this product.
When discarding this product, please obey the laws of your country.
Do not lick the product or in any way allow it to enter the mouth.
[CAUTION]
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can
damage this device. This device must be protected at all times from ESD. Static charges may easily
produce potentials of several kilovolts on the human body or equipment, which can discharge
without detection. Industry-standard ESD precautions should be used at all times.
CEL Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054 • Tel: (408) 919-2500 • www.cel.com
For a complete list of sales offices, representatives and distributors,
Please visit our website: www.cel.com/contactus
For inquiries email us at [email protected]
This document is subject to change without notice.
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