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零件编号 | BFP842ESD | ||
描述 | Robust Low Noise Silicon Germanium Bipolar RF Transistor | ||
制造商 | Infineon | ||
LOGO | |||
1 Page
BFP842ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2013-04-11
RF & Protection Devices
2 Features
BFP842ESD
Features
• Robust very low noise amplifier based on Infineon´s reliable, high
volume SiGe:C technology
• Unique combination of high-end RF performance and robustness:
16 dBm maximum RF input power, 1 kV HBM ESD hardness
• High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
• High transition frequency fT = 60 GHz enables very low noise
figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
• Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
• Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V
(3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Easy to use Pb free (RoHS compliant) and halogen free industry
standard package with visible leads
• Qualification report according to AEC-Q101 available
3
4
SOT343
2
1
Applications
As very low noise amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
• Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo)
Satellite radio (SDARs, DAB and C-band LNB)
and C-band LNB (1st and 2nd stage LNA)
• Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee
As discrete active mixer, buffer amplifier in VCOs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP842ESD
Package
SOT343
1=B
Pin Configuration
2=E
3=C
4=E
Marking
T9s
Data Sheet
8 Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
102
101
100
10−1
10−2
10−3
10−4
10−5
0.5
0.6 0.7
V [V]
BE
0.8
0.9
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2.5 V
100
10−1
10−2
10−3
10−4
10−5
10−6
10−7
0.5
0.6 0.7
V [V]
BE
0.8
0.9
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2.5 V
Data Sheet
16 Revision 1.1, 2013-04-11
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页数 | 28 页 | ||
下载 | [ BFP842ESD.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
BFP842ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor | Infineon |
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