DataSheet8.cn


PDF ( 数据手册 , 数据表 ) AUIRF7379Q

零件编号 AUIRF7379Q
描述 Dual N and P Channel MOSFET
制造商 Infineon
LOGO Infineon LOGO 


1 Page

No Preview Available !

AUIRF7379Q 数据手册, 描述, 功能
 
AUTOMOTIVE GRADE
AUIRF7379Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
  N-CHANNEL MOSFET
N-CH P-CH
S1 1
G1 2
8 D1
7 D1
VDSS
30V -30V
S2 3
6 D2 RDS(on) typ. 0.038 0.070
G2 4
5 D2
max. 0.045 0.090
P-CHANNEL MOSFET
ID
5.8A -4.3A
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
SO-8
AUIRF7379Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7379Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7379QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
P-Channel
30 -30
5.8 -4.3
4.6 -3.4
46 -34
2.5
0.02
± 20  
5.0 -5.0
-55 to + 150
Units
V
A 
W
W/°C
V
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
50
Units
°C/W
2015-9-30







AUIRF7379Q pdf, 数据表
 
P-Channel
AUIRF7379Q
1000
800
V GS = 0V,
f = 1MHz
Ciss = Cgs + C gd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
600 Ciss
400 Coss
200 Crss
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 18. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8 2015-9-30














页数 11 页
下载[ AUIRF7379Q.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
AUIRF7379QDual N and P Channel MOSFETInfineon
Infineon
AUIRF7379QPower MOSFET ( Transistor )International Rectifier
International Rectifier

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap