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零件编号 | BF888 | ||
描述 | High Performance Bipolar NPN RF Transistor | ||
制造商 | Infineon | ||
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1 Page
BF888
High Performance Bipolar NPN RF Transistor
• High transducer gain of typ. 14 dB @ 25 mA,6 GHz
• Low minimum noise figure of typ. 0.85 dB @ 6GHz
• High output compression of typ. 11 dBm @ 25 mA
3
4
2
1
• Pb-free (RoHS compliant) package
• For a wide range of non-automotive applications
- 2nd and 3rd LNA stage and mixer stage in LNB
- 5.8 GHz analog/digital cordless phone
- Satellite radio SDARS
- WLAN, WiMAX, UWB
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF888
Marking
Pin Configuration
RYs 1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
TA = 25 °C
TA = − 55 °C
Collector-emitter voltage
VCES
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Base current
Total power dissipation1)
IB
Ptot
TS ≤ 89 °C
Junction temperature
TJ
Ambient temperature
TA
Storage temperature
TStg
1Ts is measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
4.0
3.5
13
13
1.2
30
3
160
150
-55 ... 150
-55 ... 150
Unit
V
mA
mW
°C
Value
≤ 380
Unit
K/W
2010-04-06
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页数 | 5 页 | ||
下载 | [ BF888.PDF 数据手册 ] |
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