DataSheet8.cn


PDF ( 数据手册 , 数据表 ) AH118

零件编号 AH118
描述 High Linearity InGaP HBT Amplifier
制造商 TriQuint
LOGO TriQuint LOGO 


1 Page

No Preview Available !

AH118 数据手册, 描述, 功能
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Features
60 – 3500 MHz
+24.7 dBm PIdB
+40.5 dBm Output IP3
20.4 dB Gain @ 900 MHz
16.5 dB Gain @ 1900 MHz
+5V Single Positive Supply
Lead-free/Green/RoHS-compliant SOT-89 Package
General Description
The AH118 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +40.5 dBm OIP3 and +24.7 dBm of compressed 1dB
power. The AH118 is available in a lead-
free/green/RoHS-compliant SOT-89 package. All devices
are 100% RF and DC tested.
The AH118 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. Internal biasing allows the AH118 to
maintain high linearity over temperature and operate
directly off a single +5V supply. This combination makes
the device an excellent candidate for transceiver line cards
in current and next generation multi-carrier 3G base
stations.
SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Pin Configuration
Pin #
1
2
3
4
Function
Input / Base
Ground
Output / Collector
Ground
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9101
Data Sheet: Rev B 02/14/12
© 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
AH118-89G
Description
High IP3 InGaP HBT Amp
Standard T/R size = 1000 pieces on a 7” reel.
- 1 of 14 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®







AH118 pdf, 数据表
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Reference Design 2110-2170 MHz (AH118-89PCB2140)
D1
C1
C3
C2
U1
C4 L2
L3
C5
ID=C4
C=56 pF
ID=L2
C=1.5 pF
Vcc = +5 V
DIODE1
5.6 V
ID=L1
L=18 nH
ID=L3
R=0 Ohm
ID=C1
C=1e5 pF
size 1206
ID=C3
C=1000 pF
size 0805
ID=C2
C=56 pF
ID=C5
C=56 pF
ID=C6
C=1.8 pF
NET="AH118"
ID=C9
C=1.2 pF
Note:
1. The diode D1 is used as over-voltage protection on the evaluation boards. It is not
specifically required in the final circuit layout in a system using a DC regulator.
2. L2 - the 0 Ω resistor - can be removed (with a thru line) in the final circuit layout.
3. The distance from U1 pin1 pad to the edge of C6 is 253 mil.
4. The distance from U1 pin3 pad to the edge of C9 is 255 mil.
Bill of Material
Ref Des
U1
C1
C2, C4, C5
C3
C6
C9
L1
L2
L3
R1
D1
Value
0.1 μF
56 pF
1000 pF
1.8 pF
1.2 pF
18 nH
1.5 pF
Description
High Linearity Amplifier
Cap, Chip, 1206, 50 V, 10%, X7R
Cap, Chip, 0603, 50 V, 5%, NPO/COG
Cap, Chip, 0805, 50 V, 5%, NPO
Cap, Chip, 0603, 200 V, ±0.1 pF, NPO/COG
Cap, Chip, 0603, 200 V, ±0.1 pF, NPO/COG
Ind, Chip, 0603, 5%, Ceramic Core
Cap, Chip, 0603, 200 V, ±0.1 pF, NPO/COG
Res, 0402, Chip, 5%, 1/16 W
No Load Part
Zener Diode, SOD-123
Manufacturer
TriQuint
various
various
various
various
various
various
various
various
Part Number
AH118-89G
Data Sheet: Rev B 02/14/12
© 2012 TriQuint Semiconductor, Inc.
- 8 of 14 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®














页数 14 页
下载[ AH118.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
AH11High Dynamic Range Dual AmplifierWJ Communication
WJ Communication
AH11High Dynamic Range Dual AmplifierTriQuint Semiconductor
TriQuint Semiconductor
AH110High Linearity InGaP HBT AmplifierWJ Communication
WJ Communication
AH114High Linearity InGaP HBT AmplifierWJ Communication
WJ Communication

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap