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PDF ( 数据手册 , 数据表 ) BM1R00008F

零件编号 BM1R00008F
描述 CCM corresponding Secondary Side Synchronous Rectification Controller IC
制造商 ROHM Semiconductor
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BM1R00008F 数据手册, 描述, 功能
Datasheet
Low Consumption and High Accuracy Shunt Regulator Built-in
High Efficiency and Low Standby Power,
CCM corresponding
Secondary Side Synchronous Rectification
Controller IC
BM1R00xxxF
General Description
BM1R00xxxF is a synchronous rectification controller
to be used in the secondary-side output. It has a
built-in ultra-low consumption and high accuracy shunt
regulator, which significantly reduces standby power.
The shunt regulator is constructed in a completely
independent chip that enables it to operate as a GND
reference even when used in high side.
At continuous mode operation, further space saving
can be realized when operating without the input
switching synchronizing signal of the primary side.
Key Specifications
Input Voltage Range: 2.7V to 32V
Circuit Current (No Switching):
800µA(Typ)
Circuit Current (Auto Shutdown) : 120µA (Typ)
DRAIN Terminal Absolute Voltage:
120V
Operating Temperature Range: -40°C to +105°C
Package
W(Typ) x D(Typ) x H(Max)
5.00mm x 6.20mm x 1.71mm
BM1R00xxxF also features a wide operating power
supply voltage range of 2.7V to 32V for various output
applications.
Finally, by adopting the high-voltage 120V process, it
is possible to monitor the drain voltage directly.
Features
Built-in Ultra-Low Consumption Shunt Regulator
Reducing Standby Power Consumption
Synchronous Rectification FET Supports
High and Low Side
120V High Voltage Process DRAIN terminal
Wide Input Operating Voltage Range of
2.7V to 32V
Supports LLC and PWM QR Controller
No Input Required on the Primary-Side at CCM
Built-in Overvoltage Protection for SH_IN and
SH_OUT Terminal
Built-in Thermal Shutdown Function
Built-in Auto Shutdown Function
SOP8 package
Applications
AC-DC Output Power Conversion Applications:
Charger, Adapter, TV, Rice Cooker, Humidifier,
Air Conditioning, Vacuum Cleaner, etc.
SOP8
Lineup Table
Latch Protection Series
Auto Restart Protection Series
Function Name
BM1R00001
BM1R00002
BM1R00003
BM1R00004
BM1R00005
BM1R00006
BM1R00007
BM1R00008
BM1R00009
BM1R00010
BM1R00011
BM1R00012
BM1R00013
BM1R00014
BM1R00015
BM1R00016
BM1R00017
BM1R00018
BM1R00019
BM1R00020
BM1R00021
BM1R00022
BM1R00023
BM1R00024
BM1R00025
BM1R00026
BM1R00027
BM1R00028
BM1R00029
BM1R00030
Compulsion
ON Time
( μs)
1
1
1
1
1
1.5
1.5
1.5
1.5
1.5
2.3
2.3
2.3
2.3
2.3
2.8
2.8
2.8
2.8
2.8
3.5
3.5
3.5
3.5
3.5
NONE
NONE
NONE
NONE
NONE
Compulsion
OFF Time
( μs)
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
Function Name
BM1R00121
BM1R00122
BM1R00123
BM1R00124
BM1R00125
BM1R00126
BM1R00127
BM1R00128
BM1R00129
BM1R00130
BM1R00131
BM1R00132
BM1R00133
BM1R00134
BM1R00135
BM1R00136
BM1R00137
BM1R00138
BM1R00139
BM1R00140
BM1R00141
BM1R00142
BM1R00143
BM1R00144
BM1R00145
BM1R00146
BM1R00147
BM1R00148
BM1R00149
BM1R00150
Compulsion
ON Time
( μs)
1
1
1
1
1
1.5
1.5
1.5
1.5
1.5
2.3
2.3
2.3
2.3
2.3
2.8
2.8
2.8
2.8
2.8
3.5
3.5
3.5
3.5
3.5
NONE
NONE
NONE
NONE
NONE
Compulsion
OFF Time
( μs)
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111 14 001
This product has no designed protection against radioactive rays
1/22
TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002







BM1R00008F pdf, 数据表
BM1R00xxxF
Electrical Characteristics (Unless otherwise specified VCC=20V Ta=25°C)
Parameter
Symbol
Spec
MIN TYP MAX
Circuit Current
Unit
Circuit Current1
Circuit Current at Sleep Mode
Circuit Current at Normal Mode
Circuit Current at UVLO Mode
VCC Item
VCC UVLO Threshold Voltage1
VCC UVLO Threshold Voltage2
SR Controller BLOCK
GATE Turn ON Threshold
GATE Turn OFF Threshold
ION1
ISLEEP
IACT
IOFF
VUVLO1
VUVLO2
VGONN
VGOFF
0.5 1
2 mA
60 120 200 μA
350 800 1400 μA
18 35 60 μA
2.00 2.30 2.65
1.95 2.25 2.60
V
V
-150
-10
-100
-6
-50
-1
mV
mV
Compulsion ON Time(Note 5)
tCON
-9 - 9 %
Compulsion OFF Time(Note 5)
MAX_TON BLOCK
MAX_TON Timer Start Threshold
Voltage
MAX_TON Timer
MAX_TON Output Voltage
Auto Shutdown BLOCK
Auto Shutdown Detect Time
Auto Shutdown Cancel Pulse Number
Drain Monitor BLOCK
Drain Sink Current
Drain Terminal Source Current1
Drain Terminal Source Current2
Driver BLOCK
GATE Terminal High Voltage
High Side FET ON-Resistance
(VCC=2.7V)
High Side FET ON-Resistance
(VCC=5V)
High Side FET ON-Resistance
(VCC=10V)
Low Side FET ON-Resistance
(VCC=2.7V)
Low Side FET ON-Resistance
(VCC=5V)
Propagation Delay to FET Turn ON
Propagation Delay to FET Turn OFF
(Note 5) See the lineup table in page1.
tCOFF
-9
VMAX_ON_START
tMAX_ON
VMAX_ON
24
9.4
0.24
tSHD
PACT
120
-
ID_SINK
IDRAIN_SO1
IDRAIN_SO2
130
-23
-3
VGATE_H1
RHIONR1
RHIONR2
RHIONR3
RLOWONR1
RLOWONR2
tDELAY_ON
tDELAY_OFF
11
12.0
6.0
4.0
1.1
0.9
-
-
-
28
10
0.40
200
265
250
-11
-1
12
23.0
12.0
9.0
2.2
1.8
50
100
9
32
10.6
0.56
320
-
550
-5
-0.3
14
50.0
24.0
18.0
4.4
3.6
-
-
%
V
μs
V
μs
time
μA
μA
μA
V
Ω
Ω
Ω
Ω
Ω
ns
ns
Conditions
fSW=50KHz at Switching Mode
(GATE=OPEN)
At Shutdown Mode
Switching STOP Mode,
VCC=1.9V
VCC Sweep Up
VCC Sweep Down
VDRAIN=-300mV to +300mV
VDRAIN=-300mV to +300mV
Excluding BM1R00026-30 and
BM1R00146-150 which has no
Compulsion ON Time
VCC=20V, DRAIN Terminal
Voltage
RMAX_TON=100kΩ, VCC=3V,
VDRAIN=-0.37V
No Pulse to DRAIN Terminal
Input Pulse to DRAN Terminal
VDRAIN=120V
VDRAIN=0.1V
VDRAIN=-0.2V
VCC=20V
VCC=2.7V, IOUT= -10mA
VCC=5.0V, IOUT= -10mA
VCC=10V, IOUT= -10mA
VCC=2.7V, IOUT= +10mA
VCC=5.0V, IOUT= +10mA
VDRAIN=-300mV to +300mV
VDRAIN =-300mV to +300mV
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111 15 001
7/22
TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002







BM1R00008F equivalent, schematic
BM1R00xxxF
Selection of Externally Connected Components
1. MAX_TON Pin Setting
A resistance value which is connected to the MAX_TON terminal is used to set the timer to force the GATE output OFF.
(For detailed operation, please see "each block Operation / MAX_TON blocks")
Set timer is proportional to the resistance value which can be set in the range of 56k to 300k. This IC is capable of an
accuracy of 10us ± 6% at 100kΩ. However, accuracy deteriorates as the resistance value gets further away from
100kΩ.
For example, 5.6µs ±0.9µs at 56kΩ, 30µs ±4.5µs at 300kΩ.
(See graph below)
34.5u
30u
25.5u
10.6u
10.0u
9.4u
6.5u
5.6u
4.7u
GG11
56k 100k
MAX_TON Resistor [ohm]
300k
GG22
MAX_TON
TIMER
tTP p
TtMAMXA_OXN_ON
Jitter
Set the MAX_TON timer so that
the FET of the primary side (G1)
and the secondary side (G2) is
not simultaneously ON
Figure 17. MAX_TON Timer vs
MAX_TON Resistor(RMAX_TON)
Figure 18. Primary FET and Secondary FET
Sequence at CCM Mode
To prevent destruction due to surge current in continuous mode, set the MAX_TON timer before turning on the primary
side FET (G1) to forcibly OFF the secondary side FET (G2). Regarding such variations, select a resistance value of
MAX_TON terminal so that the MAX_ON timer setting time is less than one cycle in the primary side (TP > TMAX_ON).
- The primary side of the maximum frequency = fMAX [Hz]
- The primary side of the maximum frequency accuracy = fMAX [%]
- The primary side of the jitter frequency = fJITTER [Hz]
- Secondary side MAX_TON timer time = tMAX_ON
- Secondary side MAX_TON timer time accuracy = tMAX_ON
- Secondary side MAX_TON When the connection resistance accuracy = R
RMAX_TON[k] <
10000 [k][kHz]
(1+tMAX_ON[%]+R[%] +fMAX[%])×(fMAX[kHz]+fJITTER [kHz])
Frequency Variation Ratio
Maximum Frequency Value
2. Calculation Example
Primary side frequency 100kHz ± 5%
Primary side jitter frequency 8kHz
Secondary side MAX_TON timer accuracy = 7%
Secondary side MAX_TON connection resistance accuracy = 1%
RMAX_TON [k] <
10000 [k][kHz]
(1+5%+1%+7%)×(100kHz+8kHz)
= 81.94 [k]
With these conditions, MAX_TON Resistor(RMAX_TON) should be set to 81kΩ or less. In addition, it is recommended that
the temperature characteristics of each component should also be taken into account.
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111 15 001
15/22
TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002










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