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零件编号 | IJW120R070T1 | ||
描述 | Silicon Carbide-Junction Field Effect Transistor | ||
制造商 | Infineon | ||
LOGO | |||
1 Page
SiC- JFET
Silicon Carbide- Junction Field Effect Transistor
CoolSiC™
1200 V CoolSiC™ Power Transistor
IJW120R070T1
Final Datasheet
Rev. 2.0, <2013-09-11>
Power Management & Multimarket
Silicon Carbide JFET
IJW120R070T1
Thermal characteristics
3 Thermal characteristics
Table 4
Thermal characteristics TO-247-3
Parameter
Symbol
Min.
Thermal resistance, junction-case RthJC
–
Thermal resistance, junction-
ambient
RthJA
–
Soldering temperature,
wavesoldering only allowed at leads
Tsold
–
Values
Typ.
–
Max.
0.63
– 62
– 260
Unit Note/Test Condition
K/W leaded
°C
1.6 mm (0.063 in.) from case for
10 s
4 Electrical characteristics
Table 5
Parameter
Static characteristics
Symbol
Breakdown voltage, drain source V(BR)DSS
Gate threshold voltage 2)
VGS(th)
Drain- source leakage current
IDSS
Gate- source leakage current
IGSS
Drain- source on- state resistance RDS(on)
Gate resistance
RG
Values
Unit Note/Test Condition
Min. Typ. Max.
1200
–
–
VGS= -19.5 V; IDS= 1 mA;
TC= -50 °C
-13.1bin1 – -12.0bin1
-14.1bin2 – -12.9bin2
-15.0bin3 – -13.9bin3
IDS= 14 µA; VDS= 40 V;
Tj= 25 °C
-13.5bin1
-14.5bin2
-15.4bin3
–
–
–
-12.3bin1
-13.2bin2
-14.2bin3
V
IDS= 14 µA; VDS= 40 V;
Tj= 100 °C; 1)
-13.8bin1 – -12.4bin1
-14.8bin2 – -13.3bin2
-15.7bin3 – -14.3bin3
IDS= 14 µA; VDS= 40 V;
Tj= 150 °C; 1)
– 3.3 42
VDS= 1200 V; VGS= -19.5 V;
TC= 25 °C
– 6.6 84 1)
VDS= 1200 V; VGS= -19.5 V;
TC= 100 °C
–
13.2
168 1)
VDS= 1200 V; VGS= -19.5 V;
µA Tj= 150 °C
– – 125
VDS= 0 V; VGS=-19.5 V;
TC= 25 °C
– – 500 1)
VDS= 0 V; VGS= -19.5 V;
TC= 100 °C
– – 1000 1)
VDS= 0 V; VGS= -19.5 V;
TC= 150 °C
– 0.055 0.070
VGS= 0 V; IDS=12.5 A;
TC= 25 °C
– 0.100 –
– 0.130 –
VGS= 0 V; IDS=12.5 A;
Ω TC= 100 °C
VGS= 0 V; IDS=12.5 A;
TC= 150 °C
– 1.4 –
f= 1 MHz, open drain;
TC = 25 °C
1) Limits derived from product characterization, parameter not measured during production
2) For paralleling see application note
Final Datasheet
8 Rev. 2.0, <2013-09-11>
Table 21
Safe operating area diode
1000
Silicon Carbide JFET
IJW120R070T1
Electrical characteristics diagrams
Maximum transient thermal impedance
1E0
100
10 Pulse Width [s]
1E-06
1E-05
1E-04
1
1E-04
1E-03
1E-03 1E-02
D
1E-01
1E+00
1E-1
1E-2
1E-3
1E-6
0.5
0.2
0.1
0.05
0.02
0.01
0
1E-4
1E-2
tp [s]
1E0
ISD max= ƒ(D= tp / T); Tc= 25 °C; parameter: tp
ZTHjc= ƒ(tp ); parameter: D= tp / T
Final Datasheet
16 Rev. 2.0, <2013-09-11>
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页数 | 20 页 | ||
下载 | [ IJW120R070T1.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IJW120R070T1 | Silicon Carbide-Junction Field Effect Transistor | Infineon |
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