|
|
零件编号 | KTD998 | ||
描述 | Silicon NPN Power Transistors | ||
制造商 | Inchange Semiconductor | ||
LOGO | |||
1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Complement to Type KTB778
APPLICATIONS
·High power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10
A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
1A
80 W
150 ℃
Tstg Storage Temperature Range -55~150 ℃
isc Product Specification
KTD998
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
|
|||
页数 | 2 页 | ||
下载 | [ KTD998.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
KTD998 | Silicon NPN Power Transistors | Inchange Semiconductor |
KTD998 | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |