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PDF ( 数据手册 , 数据表 ) MTB090N06J3

零件编号 MTB090N06J3
描述 N-Channel Enhancement Mode Power MOSFET
制造商 CYStech Electronics
LOGO CYStech Electronics LOGO 


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MTB090N06J3 数据手册, 描述, 功能
CYStech Electronics Corp.
Spec. No. : C420J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB090N06J3 BVDSS
ID@ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=3A
RDS(ON)@VGS=4V, ID=2.5A
60V
10A
74mΩ(typ)
91mΩ(typ)
Features
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
MTB090N06J3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB090N06J3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB090N06J3
CYStek Product Specification







MTB090N06J3 pdf, 数据表
CYStech Electronics Corp.
Spec. No. : C420J3
Issued Date : 2016.09.07
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
Temperature Min(TS min)
Temperature Max(TS max)
Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
Temperature (TL)
Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB090N06J3
CYStek Product Specification














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