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零件编号 | MTB04N03H8 | ||
描述 | N-Channel Enhancement Mode Power MOSFET | ||
制造商 | CYStech Electronics | ||
LOGO | |||
1 Page
CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 1/11
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB04N03H8 BVDSS
ID
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=25A
30V
75A
3.2 mΩ(typ)
4.9 mΩ(typ)
Description
The MTB04N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
Symbol
MTB04N03H8
Outline
Pin 1
DFN5×6
G:Gate
D:Drain
S:Source
MTB04N03H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 8/11
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB04N03H8
CYStek Product Specification
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页数 | 11 页 | ||
下载 | [ MTB04N03H8.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MTB04N03H8 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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