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零件编号 | MTB04N03E3 | ||
描述 | N-Channel Enhancement Mode Power MOSFET | ||
制造商 | CYStech Electronics | ||
LOGO | |||
1 Page
CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTB04N03E3
BVDSS
ID
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
RDSON(TYP)
VGS=10V, ID=30A
VGS=4.5V, ID=24A
30V
115A
3.8mΩ
6.1mΩ
Symbol
MTB04N03E3
Outline
TO-220
G:Gate
D:Drain
S:Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
L=2mH, ID=26A, VDD=25V
Repetitive Avalanche Energy L=0.05mH
Total Power Dissipation
TC=25°C
TC=100°C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature.
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
MTB04N03E3
Limits
30
±20
115
81
460 *1
26
576
25
107
53
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification
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页数 | 7 页 | ||
下载 | [ MTB04N03E3.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MTB04N03E3 | N-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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