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PDF ( 数据手册 , 数据表 ) 74HCT123-Q100

零件编号 74HCT123-Q100
描述 Dual retriggerable monostable multivibrator
制造商 NXP Semiconductors
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74HCT123-Q100 数据手册, 描述, 功能
74HC123-Q100; 74HCT123-Q100
Dual retriggerable monostable multivibrator with reset
Rev. 2 — 19 January 2015
Product data sheet
1. General description
The 74HC123-Q100; 74HCT123-Q100 are high-speed Si-gate CMOS devices and are pin
compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with
JEDEC standard no. 7A.
The 74HC123-Q100; 74HCT123-Q100 are dual retriggerable monostable multivibrators
with output pulse width control by three methods:
1. The basic pulse is defined by the selection of the external resistor (REXT) and
capacitor (CEXT).
2. Once triggered, the basic output pulse width may be extended by retriggering the
gated active LOW-going edge input (nA) or the active HIGH-going edge input (nB). By
repeating this process, the output pulse period (nQ = HIGH, nQ = LOW) can be made
as long as desired. Alternatively an output delay can be terminated at any time by a
LOW-going edge on input nRD, which also inhibits the triggering.
3. An internal connection from nRD to the input gates makes it possible to trigger the
circuit by a HIGH-going signal at input nRD as shown in Table 3.
Schmitt trigger action in the nA and nB inputs, makes the circuit highly tolerant to slower
input rise and fall times.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from 40 C to +85 C and from 40 C to +125 C
DC triggered from active HIGH or active LOW inputs
Retriggerable for very long pulses up to 100 % duty factor
Direct reset terminates output pulse
Schmitt trigger action on all inputs except for the reset input
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 )
Specified from 40 C to +85 C and from 40 C to +125 C







74HCT123-Q100 pdf, 数据表
NXP Semiconductors
74HC123-Q100; 74HCT123-Q100
Dual retriggerable monostable multivibrator with reset
10. Dynamic characteristics
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 12.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC123-Q100
tpd
propagation nRD, nA, nB to nQ or nQ;
[1]
delay
CEXT = 0 pF; REXT = 5 k;
see Figure 9
VCC = 2.0 V
VCC = 4.5 V
VCC = 5 V; CL = 15 pF
VCC = 6.0 V
nRD (reset) to nQ or nQ;
CEXT = 0 pF; REXT = 5 k;
see Figure 9
- 83 255 -
320
-
385 ns
- 30 51
-
64
-
77 ns
- 26 -
-
-
-
- ns
- 24 43
-
54
-
65 ns
VCC = 2.0 V
- 66 215 -
270
-
325 ns
VCC = 4.5 V
- 24 43
-
54
-
65 ns
VCC = 5 V; CL = 15 pF
- 20 -
-
-
-
- ns
VCC = 6.0 V
- 19 37
-
46
-
55 ns
tt transition see Figure 9
time
VCC = 2.0 V
[1]
- 19 75
-
95
-
110 ns
VCC = 4.5 V
- 7 15
-
19
-
22 ns
VCC = 6.0 V
- 6 13
-
16
-
19 ns
tW pulse width nA LOW; see Figure 10
VCC = 2.0 V
100 8 - 125
-
150
- ns
VCC = 4.5 V
20 3 -
25
-
30
- ns
VCC = 6.0 V
17 2 -
21
-
26
- ns
nB HIGH; see Figure 10
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
nRD LOW; see Figure 11
100 17 -
125
-
150
- ns
20 6 -
25
-
30
- ns
17 5 -
21
-
26
- ns
VCC = 2.0 V
100 14 -
125
-
150
- ns
VCC = 4.5 V
20 5 -
25
-
30
- ns
VCC = 6.0 V
17 4 -
21
-
26
- ns
nQ HIGH and nQ LOW;
VCC = 5.0 V;
see Figure 10 and Figure 11
[2]
CEXT = 100 nF; REXT = 10
k
- 450 -
-
-
-
- s
CEXT = 0 pF; REXT = 5 k
- 75 -
-
-
-
- ns
74HC_HCT123_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 19 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
8 of 23







74HCT123-Q100 equivalent, schematic
NXP Semiconductors
74HC123-Q100; 74HCT123-Q100
Dual retriggerable monostable multivibrator with reset
12.3 Power-down considerations
A large capacitor CEXT may cause problems when powering-down the monostable due to
the energy stored in this capacitor. When a system containing this device is
powered-down or a rapid decrease of VCC to zero occurs, the monostable may sustain
damage. The damage is due to the capacitor discharging through the input protection
diodes. To avoid this possibility, use a damping diode (DEXT) and connect as shown in
Figure 15. DEXT is preferably a germanium or Schottky type diode able to withstand large
current surges.
'(;7
*1'


Q$  
Q%  
Fig 15. Power-down protection circuit
&(;7
5(;7
9&&
Q&(;7
 
Q5(;7&(;7
 
 
Q4
 
Q4
 
Q5'
DDD
74HC_HCT123_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 19 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
16 of 23










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