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零件编号 | CJ3401 | ||
描述 | MOSFETS | ||
制造商 | JCST | ||
LOGO | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE
z High dense cell design for extremely low RDS(ON).
z Exceptional on-resistance and maximum DC current capability
MARKING: R1
D
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
TJ
TSTG
G
S
Value
-30
±12
-4.2
350
357
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
A,Dec,2010
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页数 | 3 页 | ||
下载 | [ CJ3401.PDF 数据手册 ] |
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