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PDF ( 数据手册 , 数据表 ) NVATS5A304PLZ

零件编号 NVATS5A304PLZ
描述 Power MOSFET ( Transistor )
制造商 ON Semiconductor
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NVATS5A304PLZ 数据手册, 描述, 功能
NVATS5A304PLZ
Power MOSFET
60 V, 6.5 m, 120 A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse)
PW 10s, duty cycle 1%
Power Dissipation
Tc = 25C
ID
IDP
PD
Value
60
20
120
480
108
Unit
V
V
A
A
W
Operating Junction and
Storage Temperature
Tj, Tstg
55 to +175 C
Avalanche Energy (Single Pulse) (Note 2) EAS
656 mJ
Avalanche Current (Note 3)
IAV
75 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD = 36 V, L = 100 H, IAV = 75 A (Fig.1)
3 : L 100 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Symbol
RJC
Value
1.38
Unit
C/W
Junction to Ambient (Note 4)
RJA
77.2
Note 4 : Surface mounted on FR4 board using a 130 mm2, 1 oz. Cu pad.
C/W
www.onsemi.com
VDSS
60 V
RDS(on) Max
6.5 m@ 10 V
8.9 m@ 4.5 V
ID Max
120 A
ELECTRICAL CONNECTION
P-Channel
2,4
1 1 : Gate
2 : Drain
3 : Source
4 : Drain
3
4
12
3
ATPAK
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
NVATS5A304PLZ/D












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