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零件编号 | H9TQ17ABJTMCUR | ||
描述 | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | ||
制造商 | Hynix Semiconductor | ||
LOGO | |||
1 Page
CI-MCP Specification
16GB eNAND (x8)
+ 16Gb LPDDR3 (x32)
This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 0.1 / Mar. 2014
1
Preliminary
H9TQ17ABJTMCUR series
16GB eNAND (x8) / LPDDR3 16Gb(x32)
PACKAGE INFORMATION
221 Ball 0.5mm pitch 11.5mm x 13.0mm FBGA [t = 1.0 mm max]
2.50 ± 0.10
0.50 x 13 = 6.50
0.50
14 13 12 11 10 9 8 7 6 5 4 3 2 1
A1 INDEX MARK
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
AB
221 x Ø0.300±0.050
(Post Reflow Ø0.320±0.050)
Ø0.15 M C A B
11.50 ± 0.10
Bottom View
Rev 0.1 / Mar. 2014
Front View
SEATING PLANE
0.10 C
C
8
Preliminary
H9TQ17ABJTMCUR series
16GB eNAND (x8) / LPDDR3 16Gb(x32)
Parameter
Pull-up resistance for CMD
Pull-up resistance for DAT0-7
Pull-down resistance for Data strobe
Internal pull up resistance DAT1-DAT7
Bus signal line capacitance
Single Device capacitance
Symbol
RCMD
RDAT
RDS
Rint
CL
CDevice
Min
4.7
10
10
10
Type
Max
100
100
100
150
13
6
[Table 6]HS400 Capacitance
Unit
Kohm
Kohm
Kohm
Kohm
pF
pF
Remark
Rev 0.1 / Mar. 2014
16
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页数 | 30 页 | ||
下载 | [ H9TQ17ABJTMCUR.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
H9TQ17ABJTMCUR | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | Hynix Semiconductor |
H9TQ17ABJTMCUR-KTM | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | Hynix Semiconductor |
H9TQ17ABJTMCUR-KUM | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | Hynix Semiconductor |
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