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PDF ( 数据手册 , 数据表 ) MTB080P06J3

零件编号 MTB080P06J3
描述 P-Channel Enhancement Mode Power MOSFET
制造商 Cystech Electonics
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MTB080P06J3 数据手册, 描述, 功能
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB080P06J3 BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-5V, ID=-8A
-60V
-12.5A
82.5mΩ(typ)
107mΩ(typ)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTB080P06J3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB080P06J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080P06J3
CYStek Product Specification







MTB080P06J3 pdf, 数据表
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
Temperature Min(TS min)
100°C
150°C
Temperature Max(TS max)
Time(ts min to ts max)
150°C
60-120 seconds
200°C
60-180 seconds
Time maintained above:
Temperature (TL)
Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB080P06J3
CYStek Product Specification














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