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PDF ( 数据手册 , 数据表 ) MTB020N03KV8

零件编号 MTB020N03KV8
描述 N-Channel Enhancement Mode Power MOSFET
制造商 Cystech Electonics
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MTB020N03KV8 数据手册, 描述, 功能
CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.02.19
Revised Date : 2016.02.22
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB020N03KV8 BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=10A
VGS=4.5V, ID=8A
30V
10A
18A
12.4mΩ
16.8mΩ
Features
Low Gate Charge
Simple Drive Requirement
ESD protected gate
Pb-free lead plating package
Equivalent Circuit
MTB020N03KV8
Outline
DFN3×3
Pin 1
GGate DDrain SSource
Ordering Information
Device
MTB020N03KV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020N03KV8
CYStek Product Specification







MTB020N03KV8 pdf, 数据表
CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.02.19
Revised Date : 2016.02.22
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
Temperature Min(TS min)
Temperature Max(TS max)
Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
Temperature (TL)
Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB020N03KV8
CYStek Product Specification














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