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零件编号 | 4835 | ||
描述 | P-Channel Enhancement Mode Field Effect Transistor | ||
制造商 | Tuofeng Semiconductor | ||
LOGO | |||
1 Page
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V
RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design
• Reliable and Rugged
• SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO − 8
S SS
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
DD DD
P-Channel MOSFET
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
-30
V
±25
-8
A
-50
*Surface Mounted on FR4 Board, t ≤ 10 sec.
TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
1
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
E
Po P
D
P1
F
W
t
Bo
Ao D1
Ko
T2
J
C
A
B
T1
Application
SOP- 8
A
330 ± 1
F
B
62 +1.5
D
C
12.75+
0.15
D1
J T1 T2
2 ± 0.5 12.4 ± 0.2 2 ± 0.2
Po P1 Ao
W
12± 0. 3
Bo
P
8± 0.1
Ko
E
1.75±0.1
t
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013
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页数 | 8 页 | ||
下载 | [ 4835.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
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483-3 | RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES/ 25 AMP/ MILITARY APPROVED | Microsemi Corporation |
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