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零件编号 | IGP10N60T | ||
描述 | Low Loss IGBT | ||
制造商 | Infineon | ||
LOGO | |||
1 Page
IGP10N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Variable Speed Drive for washing machines and air conditioners
- induction cooking
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3
Type
IGP10N60T
VCE
600V
IC
10A
VCE(sat),Tj=25°C Tj,max Marking Code
Package
1.5V
175C G10T60 PG-TO-220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Value
600
24
18
30
30
20
5
110
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 30.04.2015
IGP10N60T
TRENCHSTOP™ Series
q
15V
10V
120V
480V
5V
0 V0 n C
20nC
40nC
60nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=10 A)
1nF
C iss
100pF
C oss
C rss
10pF
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
150A
125A
100A
75A
50A
25A
0 A1 2 V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 400V, Tj 150C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
IFAG IPC TD VLS
8
Rev. 2.5 30.04.2015
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页数 | 12 页 | ||
下载 | [ IGP10N60T.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IGP10N60T | Low Loss IGBT | Infineon |
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