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PDF ( 数据手册 , 数据表 ) MMBTH10LT1

零件编号 MMBTH10LT1
描述 VHF/UHF Transistors
制造商 WILLAS
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MMBTH10LT1 数据手册, 描述, 功能
WILLAS
FM120-M+
MMBTH10LTT1HRU
1.0A SUVRFHACFE /MUOUHNTFSCTHrOaTTnKYsBiAsRtRoIErRsRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offers
zbeWtteerdreecvlaerresethlaetatkhaegme actuerrrieanl ot fapnrdotdhuecrtmcaolmrepsliiasntacencwei.th RoHS requirements.
LoPwb-pFrroefielepsaucrkfaacgeemisouanvtaeidlaabplpelication in order to
LoopRwtoimHpioSzwepebrrooldaoursdcst,shpfoiagrchpeae. cffkiciniegnccoy.de suffix ”G”
HHigahlocguerrnenfrteceapparobdiluitcyt, lfoowr pfoarcwkainrgd cvooldtaegseudffrixop“H.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
HOigrhdseurrgiencgapInabfiolitrym. ation
Guardring for overvoltage protection.
Ultra higDhe-vsicpeeed switchinMga.rking
Shipping
SiliMcoMnBeTpHi1ta0xLiTa1l planar ch3ipE,Mmetal silicon3j0u0n0c/Ttiaopne.&Reel
Lead-free parts meet environmental standards of
MMAILX-ISMTUDM-19R5A0T0I/N2G28S
0.071(1.8)
0.056(1.4)
RoHS product for packing code suffix "G"
Halogen fRreaetipnrgoduct for packing coSdyemsbufofilx "H" Value
Unit
MeCcohlleactnor–iEcmaitltedr Vaolttaage
V CEO
25
EpCoxoylle:cUtoLr–9B4a-Vse0 Vraotlteadgeflame
r
et
a
rVd
ant
CBO
30
CaEsem:ittMerolBdaesdepVlaolstatigce, SOD-123HV EBO
Terminals :Plated terminals, solderable
per
3.0 ,
MIL-STD-750
Vdc
Vdc
Vdc
0.031(0.8) Typ.
SOT–203.040(1.0)
0.024(0.6)
3
C0O.0L3L1(E0C.8T) OTyRp.
THERMALMCeHthAoRdA2C02T6ERISTICS
1
PolCahriatyra:cItnedriisctaicted by cathode band
Symbol
Max
BASE
Dimensions in inches and (millimeters)
Unit
MoTuonttainl DgePvoicseitDioisnsi:pAantioyn FR– 5 Board, (1)
WeTigAh=t 2: 5A°pCproximated 0.011 gram
PD 225 mW
2
EMITTER
Derate above 25°C
1.8 mW/°C
TheMrmAalXRIeMsiUstaMncRe,AJuTnIcNtiGonStoAANmDbieEntLECTRICARLθJCA HARACT5E56RISTICS°C/W
Ratings at 25TotalaDmebviiecentDteismsippeartaiotnure unless otherwise specified.
Single phaseAhluamlfinwaavSeu,b6s0trHatze,,r(e2s)isTtAiv=e2o5f°iCnductive load.
PD
  For capacitivDeelroaatde,adbeorvaete2c5u°rCrent by 20%
300 mW
2.4 mW/°C
Thermal RReAsTisItNanGcSe, Junction to AmbienSt YMBOL FM120R-MθJAH FM130-MH FM411740-MH FM15°0C-M/WH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking CodeJunction and Storage Temperature
1T2J , Tstg 13 –55 to1+4150 15 °C 16
18 10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 Volts
MaximumDREMVSICVoEltaMgeARKING
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
MMBTH10LT1= 3EM
Maximum Average Forward Rectified Current
VDC 20 30 40 50 60
80 100 150 200 Volts
IO 1.0 Amps
 
Peak
ELECTRICAL
Forward Surge Current
C8.3HmAsRsAingCleThEaRlf sISinTe-IwCaSve(TA
 = 25°C
IFSM
unless
otherwise
noted.)
superimposed on rated load (JCEhDaErCacmteerthisotdic)
Symbol
Min
 
30
Typ Max
Unit
 
Amps
Typical ThOeFrmFalCRHesAisRtaAncCeT(NEoRteIS2)TICS
Typical Junction Capacitance (Note 1)
Operating TemCpoelleracttuorre–ERmanitgteer Breakdown Voltage
Storage Temp(IeCra=tu1re.0RmaAngdec, I B= 0 )
  Collector–Base Breakdown Voltage
(I C = 1C00HAµRAAdcCT, EI ER=IS0T)ICS
RΘJA
CJ
TJ
 
 
V (BR)-C5EO5 to +125 25
 
40
120
 
 
-V5d5cto +150
℃/W
PF
TSTG
- 65 to +175
V (BR)CBO
30
— — Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum ForEwmaridtteVrolBtaagseeaBt r1e.0aAkdDoCwn Voltage
Maximum Ave(IraEg=e1R0eµveArdsce ,CIuCr=re0n)t at @T A=25℃
Rated DC BloCckoilnlegcVtoorltCaguetoff Current @T A=125℃
  ( V CB = 25Vdc , I E = 0 )
VF
IR
V (BR)EBO
0.50 3.0
I CBO
0.70
0.5
10100
0.V8d5c
nAdc
0.9 0.92 Volts
 
mAmp
NOTES:
Collector Cutoff Current
1- Measured at(1VMCHB Z=a3n0dVadpcpl,ieIdEr=ev0er)se voltage of 4.0 VDC.
I
CBO
— — 100 uAdc
  2- Thermal ReEsismtaitntecer CFruotmofJf uCnucrtiroenntto Ambient
  ( V EB = 2.0Vdc , I C= 0 )
I EBO
— — 100 nAdc
Emitter Cutoff Current
( V = 3.0Vdc , I = 0 )
I EBO
— — 10 uAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2012-20. 6Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.












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