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零件编号 | IGP50N60T | ||
描述 | Low Loss IGBT | ||
制造商 | Infineon | ||
LOGO | |||
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IGP50N60T
TRENCHSTOP™ Series
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IGP50N60T
VCE
600 V
IC
50 A
VCE(sat),Tj=25°C Tj,max
1.5 V
175 C
Marking
G50T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
90
64
150
150
20
5
333
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 19.05.2015
IGP50N60T
TRENCHSTOP™ Series
15V
10V
120V
480V
5V
0 V0 n C
100nC
200nC
300nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=50 A)
1nF
C
iss
100pF
C oss
C rss
0V 10V 20V 30V 40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
800A
700A
600A
500A
400A
300A
200A
100A
0 A1 2 V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 400V, Tj 150C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
IFAG IPC TD VLS
8
Rev. 2.8 19.05.2015
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页数 | 12 页 | ||
下载 | [ IGP50N60T.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IGP50N60T | Low Loss IGBT | Infineon |
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