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零件编号 | IRFW640A | ||
描述 | Power MOSFET ( Transistor ) | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
Advanced Power MOSFET
IRFW/I640A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V
Lower RDS(ON) : 0.144 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 200 V
RDS(on) = 0.18 Ω
ID = 18 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
200
18
11.4
7.2
+_ 30
216
18
13.9
5.0
3.1
139
1.11
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC Junction-to-Case --
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
0.9
40
62.5
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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页数 | 7 页 | ||
下载 | [ IRFW640A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRFW640A | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRFW640B | N-Channel MOSFET | Fairchild Semiconductor |
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